At this week's VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major portion of the ...
The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...
In the development of today's advanced CMOS logic FinFET devices, the electrical resistance at the contact junction (contact resistance) is widely recognized to play an increasingly significant role ...
At Intel’s recent Technology and Manufacturing Day, Intel presented more details regarding its 10nm FinFET manufacturing process. In the presentation materials, Intel highlighted some of the major ...
The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.
Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...
The semiconductor industry is currently making a major transition from conventional planar transistors to finFETs starting at 22nm. The question is what’s next? In the lab, IBM, Intel and others have ...
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