Offered as the smallest broadband 5-W PA solution, the NPA1003 GaN PA MMIC features a 4 x 4-mm thermally enhanced QFN package with RF input and output matched to 50 Ω. The highly integrated device ...

Heralded as the world’s smallest 5W power amplifier (PA) solution, the NPA1003 GaN PA MMIC measures 4 mm x 4 mm in a thermally-enhanced QFN package with RF inputs and outputs matched to 50?. Requiring ...

CHANDLER, Ariz., June 21, 2021 (GLOBE NEWSWIRE) -- Satellite communication systems use complex modulation schemes to achieve the blazingly fast data rates required to deliver video and broadband data.

Microchip Technology Inc. recently expanded its gallium nitride (GaN) radio frequency (RF) power device portfolio with new monolithic microwave ICs (MMICs) and discrete transistors that cover ...

A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation (NOC) has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and ...

This switch offers high peak power and is designed to replace Positive-Intrinsic-Negative (PIN) diode-based RF Switches commonly used in RF front ends of many of today’s tactical and military ...