Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...

A technical paper titled “Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering” was published by researchers at Bruker Nano and Lam Research. “High ...

Modern semiconductor processes are extremely complicated and involve thousands of interacting individual process steps. During the development of these process steps, roadblocks and barriers are often ...