Infineon Technologies AG has started to commercially produce Schottky diodes based on silicon carbide (SiC) technology in an effort to provide a high-performance alternative to silicon and gallium ...

Infineon has expanded its SiC portfolio with the introduction of the fifth generation 650V thinQ! Schottky barrier diodes. As well as a more compact design, the devices are said to offer improved ...

Infineon Technologies AG introduced its third generation thinQ!(tm) SiC Schottky diodes. Featuring the industry's lowest device capacitance for any given current rating, which enhances overall system ...

Infineon Technologies AG has its expanded CoolSiC portfolio with high-voltage solutions that address 1500-VDC applications such as next-generation photovoltaic, EV charging and energy storage systems.

In response to this trend, Infineon Technologies has introduced the CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The ...

Infineon Technologies has migrated its 300-V and 600-V thinQ silicon carbide diodes from a 2-in. manufacturing process to a 3-in. process. In addition to the resulting capacity expansion, this move ...

Infineon has put a 650V silicon IGBT alongside a silicon carbide diode in the same TO-247 packages. “Due to a freewheeling SiC Schottky barrier diode, the CoolSiC Hybrid IGBTs perform with ...

The devices “raise the benefits available from SiC technology to a new level, which has never before been possible,” says Dr. Helmut Gassel, President of Infineon’s Industrial Power Control Division.

Infineon Technologies says it is diversifying its silicon carbide (SiC) supplier base and has signed a long-term agreement with Chinese SiC supplier TanKeBlue to secure additional competitive SiC ...