Onsemi has claimed the the industry’s first TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET. The transistor addresses the need for high-performance switching devices in designs with high ...
Launched at PCIM Europe in Nuremberg, the transistor has been designed to address the growing need for high-performance switching devices that are suitable for designs with high levels of power ...
Onsemi has launched its EliteSiC family of silicon-carbide devices. The company will showcase three new devices – the 1700-V EliteSiC MOSFET and two 1700-V avalanche-rated EliteSiC Schottky diodes – ...
onsemi introduced "EliteSiC" as the name of its silicon carbide (SiC) family. This week, the company will showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche ...
onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs). EliteSiC SPM 31 IPMs ...
Power is becoming the latest bottleneck to threaten progress in artificial intelligence (AI). To help tackle the looming power crunch, onsemi developed a new series of silicon trench power MOSFETs and ...
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