The promise of higher efficiency power conversion using GaN (Gallium Nitride) high electron mobility transistors (HEMT) has been achieved with devices now in volume production. This article will ...

Power Integrations’ HiperPFS-5 power factor correction (PFC) controller IC packs a 750-V GaN switch with lossless current sensing. With efficiency of up to 98.3%, the quasi-resonant (QR) device ...

HiperPFS-5 ICs enable compact, efficient power-factor stage for ultra-fast adapters, consumer electronics, computer and appliance power supplies HOUSTON--(BUSINESS WIRE)--APEC 2022 – Power ...

Wise Integration, a pioneer in digital control for gallium nitride (GaN) and GaN IC-based power supplies, today announced the release to production of its first fully digital controller, WiseWare 1.1 ...

Wise Integration has released its GaN PFC (power factor correction) controller chip to production. WIW1101 is based on a 32bit MCU, said the company, and is specifically for totem pole PFCs operating ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the availability of the EPC9171, a 90 V – 265 V universal AC input to 15 V – 48 V DC output power supply designed for USB PD3.1 ultra-fast chargers.

GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power electronics in consumer electronics, datacenters, industrial motors, appliances, and ...

GOLETA, Calif.--(BUSINESS WIRE)-- Transphorm, Inc. (OTCQB: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—today announced ...

1. A graph from “Comparative Study of Optimally Designed DC-DC Converters with SiC and Si Power Devices,” by O. Deblecker, Z. De Grève and C. Versèle, show the advantages of GaN semiconductors.

DALLAS, Nov. 9, 2020 /PRNewswire/ -- Texas Instruments (TI) (Nasdaq: TXN) today expanded its high-voltage power management portfolio with the next generation of 650-V and 600-V gallium nitride (GaN) ...