Silicon carbide (SiC) unipolar semiconductors are in wide commercial use, but their operations are limited by a trade-off relationship between breakdown voltage and specific resistance of the drift ...
Fifth-generation GeneSiC silicon carbide diodes from Navitas boast low forward voltage and ‘low built-in voltage biasing’ (‘low knee’) for high efficiency across all loads. GExxMPS06x series diodes ...
Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for ...
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