Silicon carbide (SiC) is a wide-bandgap semiconductor material utilized in high-power, high-temperature, and high-frequency electronic devices. 4H-SiC substrates have distinct characteristics, ...
SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...
Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...
Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an ...
“Launching a new Surfscan platform is an exciting event for KLA-Tencor,” said Ali Salehpour, senior vice president and general manager of the Surfscan / ADE division at KLA-Tencor. “The visible-light ...
Silicon carbide (SiC) is best known as the wide-bandgap material driving high-efficiency power electronics that support the green transition. Yet its potential reaches beyond power electronics. SiC’s ...
Silicon carbide devices are displacing their incumbent silicon counterparts in several high-volume power applications. As SiC market share continues to grow, the industry is lifting the last barriers ...
The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.
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