Researchers at the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia have investigated whether the temperature coefficient of the short circuit current in perovskite-silicon ...
Gallium nitride (GaN) semiconductor devices must pass stringent robustness tests to survive extreme conditions with both high current and high voltage. Here, short-circuits survivability is the most ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
For the PDF version of this article, including diagrams and/or equations, click here. In any off-line flyback converter design, it is possible that the output ...